High-Current Complementary Silicon Power Transistors
-50°C to +200°C
10000 Piece/Pieces per Week
Packaging & Delivery
Sealed package, tube, reel
1-3 working days after full payment.
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(new & original )MJ11033 POWER TRANSISTOR
High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.
for use as output devices in complementary general purpose amplifier applications.
• High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc h FE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built–In Base–Emitter Shunt Resistor • Junction Temperature to +200C