TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM
-55°C to +150°C
10000 Piece/Pieces per Week
Packaging & Delivery
Sealed package, tube, reel
1-3 working days after full payment.
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Item: (New & Original )MTY55N20E TY55N20E TOMS POWER FET
N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Diode is Characterized for Use in Bridge Circuits • I DSS and VDS(on) Specified at Elevated Temperature